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FCA76N60N Datasheet, MOSFET, Fairchild Semiconductor

FCA76N60N Datasheet, MOSFET, Fairchild Semiconductor

FCA76N60N

datasheet Download (Size : 1.34MB)

FCA76N60N Datasheet
FCA76N60N

datasheet Download (Size : 1.34MB)

FCA76N60N Datasheet

FCA76N60N Features and benefits

FCA76N60N Features and benefits


* RDS(on) = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A
* Ultra Low Gate Charge (Typ. Qg = 218 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF)

FCA76N60N Application

FCA76N60N Application

such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G G D S TO-3PN MOS.

FCA76N60N Description

FCA76N60N Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise pro.

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TAGS

FCA76N60N
MOSFET
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

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